View SCT50N120_9075041.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

april 2017 docid027989 rev 4 1 / 11 this is information on a product in full production. www.st.com SCT50N120 silicon carbide power mosfet 1200 v, 65 a, 59 m? (typ., t j =150 c) in an hip247? package datasheet - production data figure 1 : internal schematic diagram features ? very tight variation of on - resistance vs. temperature ? very high operating junction temperature capability (t j = 200 c) ? ver y fast and robust intrinsic body diode ? low capacitance applications ? solar inverters, ups ? motor drives ? high voltage dc - dc converters ? switch mode power supplies description this silicon carbide power mosfet is produced exploiting the advanced, innovative properties of wide bandgap materials. this results in unsurpassed on - resistance per unit area and very good switching performance almost independent of temperature. the outstanding thermal properties of the sic material allows designers to use an industry - standard outline with significantly improved thermal capability. thes e features render the device perfectly suitable for high - efficiency and high power density applications. table 1: device summary order code marking package packaging SCT50N120 SCT50N120 hip247? tube am01475v1_nozen d(2, t ab) g(1) s(3)
contents SCT50N120 2 / 11 docid027989 rev 4 contents 1 electrical ratings ................................ ................................ ............. 3 2 electrical characteristics ................................ ................................ 4 2.1 electrical characteristics (curves) ................................ ...................... 5 3 package information ................................ ................................ ....... 8 3.1 hip247? package information ................................ .......................... 8 4 revision history ................................ ................................ ............ 10
SCT50N120 electrical ratings docid027989 rev 4 3 / 11 1 electrical ratings table 2: absolute maximum ratings symbol parameter value unit v ds drain - source voltage 1200 v v gs gate - source voltage - 10 to 25 v i d drain current (continuous) at t c = 25 c 65 a i d drain current (continuous) at t c = 100 c 50 a i dm (1) drain current (pulsed) 130 a p tot total dissipation at t c = 25 c 318 w t stg storage temperature range - 55 to 200 c t j operating junction temperature range c notes: (1) pulse width limited by safe operating area. table 3: thermal data symbol parameter value unit r thj - case thermal resistance junction - case 0.55 c/w r thj - amb thermal resistance junction - ambient 40 c/w
electrical characteristics SCT50N120 4 / 11 docid027989 rev 4 2 electrical characteristics (t case = 25 c unless otherwise specified). table 4: on/off states symbol parameter test conditions min. typ. max. unit i dss zero gate voltage drain current v ds = 1200 v, v gs = 0 v 1 100 a v ds = 1200 v, v gs = 0 v, t j = 200 c 10 a i gss gate - body leakage current v ds = 0 v, v gs = - 10 to 22 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 1 ma 1.8 3.0 v r ds(on) static drain - source on - resistance v gs = 20 v, i d = 40 a 52 69 m v gs = 20 v, i d = 40 a, t j = 150 c 59 m v gs = 20 v, i d = 40 a, t j = 200 c 70 m table 5: dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 400 v, f = 1 mhz, v gs = 0 v - 1900 - pf c oss output capacitance - 170 - pf c rss reverse transfer capacitance - 30 - pf q g total gate charge v dd = 800 v, i d = 40 a, v gs = 0 to 20 v - 122 - nc q gs gate - source charge - 19 - nc q gd gate - drain charge - 35 - nc r g gate input resistance f=1 mhz open drain - 1.9 - table 6: switching energy (inductive load) symbol parameter test conditions min. typ. max. unit e on turn - on switching energy v dd = 800 v, i d = 40 a r g = 2.2 , v gs = - 5 to 20 v - 530 - j e off turn - off switching energy - 310 - j e on turn - on switching energy v dd = 800 v, i d = 40 a r g = 2.2 , v gs = - 5 to 20 v t j = 150 c - 670 - j e off turn - off switching energy - 334 - j table 7: reverse sic diode characteristics symbol parameter test conditions min typ. max unit v sd diode forward voltage i f = 20 a, v gs = 0 v - 3.5 - v t rr reverse recovery time i f = 40 a, di/dt = 2000/ns v dd = 800 v - 55 ns q rr reverse recovery charge - 230 - nc i rrm reverse recovery current - 14 - a
SCT50N120 electrical characteristics docid027989 rev 4 5 / 11 2.1 electrical characteristics (curves) figure 2 : safe operating area figure 3 : thermal impedance figure 4 : output characteristics (t j = 25 c) figure 5 : output characteristics (t j = 150 c) figure 6 : output characteristics (t j = 200 c) figure 7 : transfer characteristics
electrical characteristics SCT50N120 6 / 11 docid027989 rev 4 figure 8 : power dissipation figure 9 : gate charge vs gate - source voltage figure 10 : capacitance variations figure 11 : switching energy vs. drain current figure 12 : switching energy vs. junction temperature figure 13 : normalized v (br)d ss vs. temperature
SCT50N120 electrical characteristics docid027989 rev 4 7 / 11 figure 14 : normalized gate threshold voltage vs. temperature figure 15 : normalized on - resistance vs. temperature figure 16 : reverse conduction characteristics (t j = - 50 c) figure 17 : reverse conduction characteristics (t j = 25 c) figure 18 : reverse conduction characteristics (t j = 150 c)
package information SCT50N120 8 / 11 docid027989 rev 4 3 package information in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? speci fications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. 3.1 hip247? package information figure 19 : h ip247? package outline
SCT50N120 pack age information docid027989 rev 4 9 / 11 table 8: hip247? package mechanical data dim. mm min. typ. max. a 4.85 5.15 a1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ?p 3.55 3.65 ?r 4.50 5.50 s 5.30 5.50 5.70
revision history SCT50N120 10 / 11 docid027989 rev 4 4 revision history table 9: document revision history date revision changes 17 - jun - 2015 1 first release 12 - may - 2016 2 modified title. modified: table 2: "absolute maximum ratings", table 4: "on/off states", table 5: "dynamic", table 6: "switching energy (inductive load)", and table 7: "reverse sic diode characteristics". added: section 4.1: "electrical cha racteristics (curves)". minor text changes. 23 - jun - 2016 3 document status promoted from preliminary to production data. 03 - apr - 2017 4 modified table 7: "reverse sic diode characteristics" modified figure 7: "transfer characteristics" , figure 15: "normalized on - resistance vs. temperature" , figure 16: "reverse conduction characteristics (t j = - 50 c)" , figure 17: "reverse conduction characteristics (t j = 25 c)" and figure 18: "reverse conduction characteristics (t j = 150 c)" updated section 3 : "package info rmation" minor text changes.
SCT50N120 docid027989 rev 4 11 / 11 important notice C please read carefully stmicroelectronics nv and its subsidiaries (st) reserve the right to make changes, corrections, enhancements, modifications , and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant information on st products before placing orders. st products are sold pursuant to sts terms and conditions of sale in place at the time of or der acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and s t assumes no liability for application assistance or the design of purchasers products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information se t forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2017 stmicroelectronics C all rights reserved

▲Up To Search▲

Price & Availability of SCT50N120

	To Download SCT50N120 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .